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january 2010 doc id 16963 rev 1 1/13 13 STF13NM60N-H n-channel 600 v, 0.28 ? , 11 a mdmesh? ii power mosfet in to-220fp features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices implements second generation mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d STF13NM60N-H 650 v < 0.36 ? 11 a to-220fp 1 2 3 3# $ ' 3 table 1. device summary order codes marking packages packaging STF13NM60N-H (1) 13nm60n to-220fp tube 1. the device meets ecopack? standards, an environmental ly-friendly grade of products commonly referred to as ?halogen-free? . see section 4: package mechanical data . www.st.com obsolete product(s) - obsolete product(s)
contents STF13NM60N-H 2/13 doc id 16963 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 obsolete product(s) - obsolete product(s)
STF13NM60N-H electrical ratings doc id 16963 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 6.93 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 (1) a p tot total dissipation at t c = 25 c 25 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repeti tive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj obsolete product(s) - obsolete product(s)
electrical characteristics STF13NM60N-H 4/13 doc id 16963 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load drain source voltage slope v dd =480 v, i d = 9 a, v gs =10 v 45 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 5.5 a - 7 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 790 60 3.6 - pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 135 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 17) - 30 15 4 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -4.7 - ?
STF13NM60N-H electrical characteristics doc id 16963 rev 1 5/13 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 5.5 a r g =4.7 ? v gs = 10 v (see figure 16) - 3 8 30 10 - ns ns ns ns table 8. source drain diode symbol parameter test co nditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v (see figure 18) - 230 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 18) - 290 190 17 ns c a obsolete product(s) - obsolete product(s)
electrical characteristics STF13NM60N-H 6/13 doc id 16963 rev 1 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 259v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 260v1 i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 v g s =10v 3 0 am0 33 00v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 10 20 25 am0 33 01v1 obsolete product(s) - obsolete product(s)
STF13NM60N-H electrical characteristics doc id 16963 rev 1 7/13 figure 8. transconductance figure 9. static drain-source on resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature g f s 2.5 1.5 0.5 0 6 i d (a) ( s ) 2 10 4 8 3 .5 4.5 5.5 6.5 7.5 8 .5 t j =-50c t j =25c t j =150c am0 33 0 3 v1 r d s (on) 0.26 0.24 0.22 0.2 0 4 i d (a) ( ? ) 2 6 0.2 8 0. 3 0 i d =5.5a v g s =10v 8 10 am0 33 02v1 v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =4 8 0v i d =11a 3 0 12 3 00 200 100 0 400 500 v d s v g s am0 33 05v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 33 04v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am0 33 06v1 r d s (on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1.7 1.5 1. 3 1.9 2.1 am0 33 07v1 obsolete product(s) - obsolete product(s)
electrical characteristics STF13NM60N-H 8/13 doc id 16963 rev 1 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 tj=-50c tj=25c tj=150c am0 33 09v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 125 am0 33 0 8 v1 obsolete product(s) - obsolete product(s)
STF13NM60N-H test circuits doc id 16963 rev 1 9/13 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive wavefor m figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s obsolete product(s) - obsolete product(s)
package mechanical data STF13NM60N-H 10/13 doc id 16963 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. obsolete product(s) - obsolete product(s)
STF13NM60N-H package mechanical data doc id 16963 rev 1 11/13 figure 22. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 obsolete product(s) - obsolete product(s)
revision history STF13NM60N-H 12/13 doc id 16963 rev 1 5 revision history table 10. document revision history date revision changes 08-jan-2010 1 first release obsolete product(s) - obsolete product(s)
STF13NM60N-H doc id 16963 rev 1 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)

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